parameter max. units v ces collector-to-emitter breakdown voltage 600 v i c @ t c = 25c continuous collector current 70 i c @ t c = 100c continuous collector current 41 a i cm pulsed collector current 140 i lm clamped inductive load current 140 v ge gate-to-emitter voltage 20 v e arv reverse voltage avalanche energy 20 mj p d @ t c = 25c maximum power dissipation 200 p d @ t c = 100c maximum power dissipation 78 t j operating junction and -55 to + 150 t stg storage temperature range c max reflow temperature 225 IRG4PC50S-P standard speed igbt insulated gate bipolar transistor parameter typ. max. units r jc junction-to-case ??? 0.64 r cs case-to-sink, flat, greased surface 0.24 ??? c/w r ja junction-to-ambient, typical socket mount ??? 40 thermal resistance absolute maximum ratings w e c g n-channel features features features features features standard: optimized for minimum saturation voltage and low operating frequencies ( < 1khz) generation 4 igbt design provides tighter parameter distribution and higher efficiency than generation 3 industry standard to-247ac package surface mountable generation 4 igbt's offer highest efficiency available igbt's optimized for specified application conditions designed to be a "drop-in" replacement for equivalent industry-standard generation 3 ir igbt's benefits v ces = 600v v ce(on) typ. = 1.28v @v ge = 15v, i c = 41a 1 www.irf.com 05/14/02 surface mountable to-247
IRG4PC50S-P 2 www.irf.com parameter min. typ. max. units conditions q g total gate charge (turn-on) ? 180 280 i c = 41a q ge gate - emitter charge (turn-on) ? 24 37 nc v cc = 400v see fig. 8 q gc gate - collector charge (turn-on) ? 61 92 v ge = 15v t d(on) turn-on delay time ? 33 ? t r rise time ? 30 ? t j = 25c t d(off) turn-off delay time ? 650 980 i c = 41a, v cc = 480v t f fall time ? 400 600 v ge = 15v, r g = 5.0 ? e on turn-on switching loss ? 0.72 ? energy losses include "tail" e off turn-off switching loss ? 8.27 ? mj see fig. 9, 10, 14 e ts total switching loss ? 8.99 13 t d(on) turn-on delay time ? 31 ? t j = 150c, t r rise time ? 31 ? i c = 41a, v cc = 480v t d(off) turn-off delay time ? 1080 ? v ge = 15v, r g = 5.0 ? t f fall time ? 620 ? energy losses include "tail" e ts total switching loss ? 15 ? mj see fig. 11, 14 l e internal emitter inductance ? 13 ? nh measured 5mm from package c ies input capacitance ? 4100 ? v ge = 0v c oes output capacitance ? 250 ? pf v cc = 30v see fig. 7 c res reverse transfer capacitance ? 48 ? ? = 1.0mhz parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 600 ? ? v v ge = 0v, i c = 250a v (br)ecs emitter-to-collector breakdown voltage 18 ? ? v v ge = 0v, i c = 1.0a ? v (br)ces / ? t j temperature coeff. of breakdown voltage ? 0.75 ? v/c v ge = 0v, i c = 1.0ma ? 1.28 1.36 i c = 41a v ge = 15v v ce(on) collector-to-emitter saturation voltage ? 1.62 ? i c = 80a see fig.2, 5 ? 1.28 ? i c = 41a , t j = 150c v ge(th) gate threshold voltage 3.0 ? 6.0 v ce = v ge , i c = 250a ? v ge(th) / ? t j temperature coeff. of threshold voltage ? -9.3 ? mv/c v ce = v ge , i c = 250a g fe forward transconductance 17 34 ? s v ce = 100v, i c = 41a ? ? 250 v ge = 0v, v ce = 600v ? ? 2.0 v ge = 0v, v ce = 10v, t j = 25c ? ? 1000 v ge = 0v, v ce = 600v, t j = 150c i ges gate-to-emitter leakage current ? ? 100 na v ge = 20v electrical characteristics @ t j = 25c (unless otherwise specified) i ces zero gate voltage collector current v a switching characteristics @ t j = 25c (unless otherwise specified) ns ns pulse width 80s; duty factor 0.1%. pulse width 5.0s, single shot. notes: repetitive rating; v ge = 20v, pulse width limited by max. junction temperature. ( see fig. 13b ) v cc = 80%(v ces ), v ge = 20v, l = 10h, r g = 5.0 ? , (see fig. 13a) repetitive rating; pulse width limited by maximum junction temperature.
IRG4PC50S-P www.irf.com 3 fig. 1 - typical load current vs. frequency (load current = i rms of fundamental) fig. 2 - typical output characteristics fig. 3 - typical transfer characteristics 1 10 100 1000 0.1 1 10 v , collector-to-emitter volta g e (v) i , collector-to-emitter current (a) ce c v = 15v 20 s pulse width ge t = 25 c j o t = 150 c j o 1 10 100 1000 5 6 7 8 9 10 v , gate-to-emitter voltage (v) i , collector-to-emitter current (a) ge c v = 50v 5 s pulse width cc t = 25 c j o t = 150 c j o 0 20 40 60 80 100 0.1 1 10 100 f, fre q uenc y ( khz ) a 60% of rated voltage i ideal diodes square wave: for both: d uty cycle: 50% t = 125c t = 90c gate drive as specified sink j power dissipation = 40w triangular wave: i clamp voltage: 80% of rated load current ( a )
IRG4PC50S-P 4 www.irf.com fig. 6 - maximum effective transient thermal impedance, junction-to-case fig. 5 - typical collector-to-emitter voltage vs. junction temperature fig. 4 - maximum collector current vs. case temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 t , junction temperature ( c) v , collector-to-emitter voltage(v) j ce v = 15v 80 us pulse width ge i = a 20.5 c i = a 41 c i = a 82 c 0 20 40 60 80 25 50 75 100 125 150 maximum dc collector current (a) t , case temperature (c) c v = 15v ge limited by package 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 0.50 single pulse (thermal response)
IRG4PC50S-P www.irf.com 5 fig. 7 - typical capacitance vs. collector-to-emitter voltage fig. 8 - typical gate charge vs. gate-to-emitter voltage fig. 9 - typical switching losses vs. gate resistance fig. 10 - typical switching losses vs. junction temperature 0 40 80 120 160 200 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-emitter voltage (v) g ge v = 400v i = 41a cc c -60 -40 -20 0 20 40 60 80 100 120 140 160 1 10 100 t , junction temperature ( c ) total switching losses (mj) j r = ohm v = 15v v = 480v g ge cc i = a 82 c i = a 41 c i = a 20.5 c 5.0 ? 1 10 100 0 2000 4000 6000 8000 v , collector-to-emitter voltage (v) c, capacitance (pf) ce v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted ge ies g e g c , ce res g c oes ce g c c ies c oes c res 0 10 20 30 40 50 8.5 9.0 9.5 10.0 r , gate resistance (ohm) total switching losses (mj) g v = 480v v = 15v t = 25 c i = 41a cc ge j c r g , gate resistance ( ? )
IRG4PC50S-P 6 www.irf.com fig. 11 - typical switching losses vs. collector-to-emitter current fig. 12 - turn-off soa 0 20 40 60 80 100 0 10 20 30 40 i , collector-to-emitter current (a) total switching losses (mj) c r = ohm t = 150 c v = 480v v = 15v g j cc ge 1 10 100 1000 1 10 100 1000 v = 20v t = 125 c ge j o v , collector-to-emitter volta g e (v) i , collector-to-emitter current (a) ce c safe operating area 5.0 ?
IRG4PC50S-P www.irf.com 7 480v 4 x i c @ 25c d.u.t. 50v l v * c * driver same t y p e as d.u.t.; vc = 80% of vce ( max ) * note: due to the 50v p ow er su p p l y , p ulse width and inductor w ill increase to obtain rated id. 1000v fig. 13a - clamped inductive load test circuit fig. 13b - pulsed collector current test circuit 480f 960v 0 - 480v r l = t=5s d(on) t t f t r 90% t d(off) 10% 90% 10% 5% v c i c e on e off ts on off e = (e +e ) fig. 14b - switching loss waveforms 50v driver* 1000v d.u.t. i c c v l fig. 14a - switching loss test circuit * driver same type as d.u.t., vc = 480v
IRG4PC50S-P 8 www.irf.com data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 05/02 to-247ac part marking information to-247ac package outline dimensions are shown in millimeters (inches) lead assignments notes: - d - 5.30 (.209) 4.70 (.185) 2.50 (.089) 1.50 (.059) 4 3x 0.80 (.031) 0.40 (.016) 2.60 (.102) 2.20 (.087) 3.40 (.133) 3.00 (.118) 3x 0.25 (.010) m ca s 4.30 (.170) 3.70 (.145) - c - 2x 5.50 (.217) 4.50 (.177) 5.50 (.217) 0.25 (.010) 1.40 (.056) 1.00 (.039) 3.65 (.143) 3.55 (.140) d mm b - a - 15.90 (.626) 15.30 (.602) - b - 123 20.30 (.800) 19.70 (.775) 14.80 (.583) 14.20 (.559) 2.40 (.094) 2.00 (.079) 2x 2x 5.45 (.215) 1 dimensioning & tolerancing per ansi y14.5m, 1982. 2 controlling dimension : inch. 3 conforms to jedec outline to-247-ac. 1 - gate 2 - drain 3 - source 4 - drain in ter n a tio n a l r e c tifie r lo g o a s se m b l y lot code example : this is an irfpe30 w ith assembly lo t c o d e 3a 1q part number date code (yyw w ) y y = ye a r ww week 3a1q 9302 ir fp e 30 a
|
